* Please note only the documents with the authors' permission have been posted.
Morning | Wednesday, 26 August 2026
Keynote
1. Challenges and Innovations in Data Center Power Systems to Meet the AI Power Demand
Speaker: Dehong Xu, Zhejiang University CN
Chairperson: Leo Lorenz, ECPE,DE
Morning Speical Session | Wednesday, 26 August 2026
Power Supply for AI Data Center
2.Challenges and Trends of Energy Efficiency Solutions for AI Data Center
Jinfa Zhang, Delta Electronics (Shanghai) Co., Ltd., CN
3. Powering the Future of AI: Next-Generation Data Center Architectures
Ilknur Colak, Schneider Electric, DE
4. Powering the AI Revolution: Power Supply Units for next Generation AI Data Centers
Varajao Diogo, Infineon Technologies, DE
5. Topology and Magnetics for Vertical Power Delivery
Yenan Chen, Zhejiang University, CN
Afternoon Poster Dialogue Session | Wednesday, 26 August 2026
Power Devices
PP001. A Simulation Investigation into HPD Power Modules
Lei Zhang, Hao Liu, Sen Wang, Keqiang Ma, Rui Li, Xianfeng Dai, Chengdu Semi-Future Technology Co., Ltd, CN
Xin Yuan, Yafei Wang, Wei Liu, Guodong Cheng, Yao Yao, Qiang Xiao, Haihui Luo, Wenqing Mei, Zhuzhou CRRC Times Semiconductor Co., Ltd., State Key Laboratory of Power Semiconductor and Integration Technology, CN
PP003. High power density 1700V/1000A RC IGBT module for Wind energy application
Hai Cai, Liheng Zhu, Qiqi Liu, Rongzhen Qin, Qiang Xiao, Haihui Luo, State key Laboratory of Advanced Power Semiconductor Devices, Zhuzhou CRRC Times Semiconductor Co., Ltd., CN
PP004. A New 6 Inch IGCT Platform for up to 8.5 kV with Outstanding Current Capability
Christian Winter, Umamaheswara Vemulapati, Tobias Wikström, Thomas Stiasny, Chiara Corvasc, Hitachi Energy Ltd. Semiconductors, CH
Shota Saito, Yoichi Hironaka, Ryo Tsuda, Nobuhiko Tanaka, Kenji Hatori, Mitsubishi Electric Corporation, JP
Jian Sun, Bo Hu, Gaosheng Song, Mitsubishi Electric & Electronics (Shanghai) Co., Ltd., CN
Rui Li, Ke Yang, Keqiang Ma, Min Hu, Hao Liu, Lei Zhang, Yu Zhang, Sen Wang, Chengdu Semi-Future Technology Co., Ltd., CN
Nebojsha Levkovski, Mathias Geike, Tomas Reiter, Matthias Fiebig, Alexandra Bausch, Infineon Technologies AG, DE
PP008. New-Generation 1400V U4 IGBT Module for Higher Power Density PV Inverter Applications
Hanwen Deng, Di Li, Lixiao Liang, Liheng Zhu, Rongzhen Qin, Qiang Xiao, State key Laboratory of Advanced Power Semiconductor Devices, Zhuzhou CRRC Times Semiconductor Co., Ltd., CN
PP009. 8th Generation LV100 IGBT Module for High Power Central-type PCS
Bo Hu, Jian Sun, Siqing Lu, Gaosheng Song, Mitsubishi Electric & Electronics (Shanghai) Co., Ltd., CN
Nobuya Nishida, Zhengfeng Li, Mitsubishi Electric Power Device Works, JP
PP010. Replacing 4PP: Non-Contact Sheet Resistance Measurement for Power Module Materials
Bo Chen, Michael Hofmann, Marcus Klein, SURAGUS GmbH, DE
PP011. New Generation 6500V/600A Full SiC Power Module for High Speed Railway Traction Application
Guangyuan Qin, Yanxi Li, Haihui Luo, Tingchang Shi, Chengchen Liu, Hui Wang, Qiang Xiao Zhuzhou CRRC Times Semiconductor Co., Ltd., CN
PP012. Design Considerations of Active Neutral Point Clamped Inverter for Energy Storage System
Andrew Yang, Yongtaek Lee, onsemi, KR
Lei Yang, Liwei Yin, Yi Liu, onsemi, CN
Lars Knoll, Tommaso Stecconi, Raffael Schnell, Paula Reigosa, Sven Matthias, Nick Schneider, Roger Stark, Nicolo Oliva, SwissSEM Technologies AG, CH
Coris Li, Leon Liang, Sun.King Pacific Semiconductor Technology, CN
PP014. Young Engineer Award Finalist
A Solid-State High-voltage High-frequency Pulse Power Supply with Adjustable Pulse Speed for Multi-Type Loads
Xin Li, Yifei Luo, Fei Xiao, Weichao Li, Honglin Li, National Key Laboratory of Electromagnetic Energy, Naval University of Engineering, CN
Rui Zhang, School of Integrated Circuits, Wuhan University, CN
Fengming Yang, School of Electrical and Electronic Engineering, Huazhong University of Science and Technology, CN
PP015. Effects of Gate Stress on Parameter Stability and Switching Losses in SiC MOSFETs
Wenqi Zhou, Bosch (China) Investment Ltd., CN
Caixia Xiao, Jochen Streit, Karl Oberdieck, Robert Bosch GmbH, DE
Nima Lotfi, Reinhold Elferich, Dr. Sebastian Fahlbusch, Nexperia Germany GmbH, DE
Thilo Steinbock, Prof. Klaus F. Hoffmann, Helmut-Schmidt-University, DE
Filippo Scrimizzi, Sebastian Heinz, Tim Lischka; Pradip Chatterjeet, Harvey Cheng, Nexperia B.V., IT
PP018. Research on Packaging Structure of T-Type Three-Level GaN/SiC Hybrid Power Module
Yuhui Kang, Xingjia Yang, Tianyu Zhao, Institute of Electrical Engineering, Chinese Academy of Sciences, State Key Laboratory of High Density Electromagnetic Power and Systems, CN
Puqi Ning, Tao Fan, Institute of Electrical Engineering Chinese Academy of Sciences, University of Chinese Academy of Sciences, State Key Laboratory of High Density Electromagnetic Power and Systems
PP019. Optimization of Gate Driver Current Shaping to Enhance Switching Performance of SiC-MOSFETs
Lan Fang, Chouhdary Junaid Arshad, Pushkar Kulkarni, Mobility Elect
Afternoon Poster Dialogue Session | Wednesday, 26 August 2026
Power Devices, Packaging and Reliability
PP020. Design Considerations for Gate Driver Active Gate Control:
Voltage Peak Suppression and Turn-off Loss
Jaewon Choi, Kyusik Ma, Dongsoo Kim, Jungdoo Kim, Jeongmin Son, Kyoungdeok Kim, Infineon Technologies, KR
Masafumi Jochi, Toma Takao, Power Device Works, Mitsubishi Electric Co., Ltd., JP
Xiaoling Wang, Bizhe Zhu, Mitsubishi Electric &Electronics (Shanghai) Co., Ltd, CN
Soohyuk Han, Kyoungpil Kang, Hyongsub Jo, Kihyun Lee, Minsub Lee, Infineon Technologies Korea Co., KR
PP023. Compact DIPIPM used in dual axles servo
Siqing Lu, Yuancheng Zhang, Jinxin Shi, Semiconductor Division, Mitsubishi Electric & Electronics (Shanghai) Co., Ltd., CN
Hyoungsub Jo, Jungdoo Kim, Jinhyeok Kim, Kihyun Lee, Soohyuk Han, Bokkeun Song, Infineon Technologies Korea, KR
PP025. Efficiency and Thermal Performance Comparison of SiC‑MOSFET and Si‑IGBT IPMs in the SPM31
Seonghyeon Kim, Sangmin Park, Junho Lee, Juyoung Kim, onsemi, KR
Kapil Kelkar, onsemi, U.S.A
PP026. System-Level Short-Circuit Failure Mechanisms of IPMs in Practical Motor-Drive Applications
Yuquan Su, Shao-Nan Wang, Hao Lan, MiSiliconn Semiconductor Technologies Co., Ltd., CN
Yuquan Su, Shao-Nan Wang, Hao Lan, StarPower Semiconductor Ltd
PP027. Junction Temperature Evolution of IGBTs under Power Cycling conditions
Juyoung Kim, Aster Park, onsemi, KR
Lei Yang, onsemi, CN
PP028. University Scientist Award Finalist
Non-Destructive Bond Wire Failure Detection in SiC Power Transistors Using Reflectometry Signals
Valentyna Afanasenko, Marius Niculescu, Ingmar Kallfass, Institute of Robust Power Semiconductor Systems, University of Stuttgart, DE
Markus Pfeiffer, Tim Sailer, Robert Bosch GmbH, DE
PP029. Advanced Thermal Management Solutions for Enhanced Compact 3D Power SiP Technologies
Po-An Lin, Hsin-Han Lin, Shih-Wen Lu, Harrison Chang, Advanced Semiconductor Engineering Inc, Taiwan, CN
Yuntian Gao, Lingyu Zhu, Yingbin Li, Hao Sun, Xia Gong, Xi'an Jiaotong University, CN
Sven Matthias, Raffael Schnell, Coris Li, SwissSEM Technologies AG, CH
Xu Quinn, Morax Wang, Ian Wang, Sunking Pacific Semiconductors Technology (Zhejiang) Co. Ltd, CN
PP032. Application of Laser Welding Technology in Power Module
Yi Chen, Ming-Hung Chen, Yi-Chun Chou, Ren-Jieh Kao, Yun-I Yeh, Advanced Semiconductor Engineering, INC, Taiwan, CN
Wenjie Wu, Zizhen Cheng, Kai Peng, Zhiqiang Zhao, Fengtao Yang, Laili Wang,Yongmei Gan, Xi'an Jiaotong University, CN
Devin Xu, Infineon Technologies China Co.,Ltd
Alex Widhalm, Waldemar Jakobi, Christian Müller, Infineon Technologies AG, DE
Bendong Ma, Institute of Electrical Engineering, Chinese Academy of Sciences, University of Chinese Academy of Sciences, CN
Hao Zhang, Xiaobo Jing, Infineon Technologies China Co. Ltd., CN
Xing Liu, Qing Sun, Ghazaryan Areg, Andreas Huerner, Maria Cotorogea, Infineon Technologies AG, DE
PP037. Effect of Humidity on the Reliability of Next-generation Chip Embedded PCB Packaging
Feng Li, Jun Wang, Miaoran Liu, Haozhe Chen, State Key Laboratory of Environmental Adaptability for Industrial Products, China National Electric Apparatus Research Institute Co., Ltd., CN
Rajan Ambat, Department of Civil and Mechanical Engineering, Technical University of Denmark, DK
PP038. A Newly 6-in-1 SiC Power Module Electro-Thermal-Reliability Co-Analysis
Feng Zhu, Yu Zhang, Mike Zeng, Yong Wu, Huihui Li, Daohui Li, Beijing NEXIC Technology Co., Ltd., CN
Youyang Wang, Nanjing University of Science and Technology, CN
Yuanjian Liu, Qiang Xiao, Haiding Shi, Guiqin Chang, QianYing Guo, TingChang Shi, Haihui Luo, Zhuzhou CRRC Times Semiconductor Co.,Ltd, CN
PP040. An Overview of High Heat Capacitor Materials for e-Mobility Applications
Adel Bastawros, SABIC, USA
Yuan Zhou, SABIC, CN
Fumio Yu, SABIC, JP
Smart Grid and AI
Kai Zhao, Mingdan Zhang, Infineon Semiconductors (Shenzhen) Co. Ltd., CN
Jiabao Jing, Shaoxiong Yao, Shenzhen Sinexcel Electric Co., Ltd, CN
Junye Chen, Michael Schütt, Hans-Günter Eckel, Rostock University, DE
Xin Qi, Yuhang Zhao, Xiuchen Xu, University of Science and Technology Beijing, CN
Chaobo Dai, Zhenggang Lu, China Electric Power Research Institute, CN
Mario Pacas, University of Siegen, DE
Joachim Holtz, University of Wuppertal, DE
PP044. A Review of Global V2G Research from an Energy Technology Economics Perspective
Yueran Ni, Shanghai University of Engineering Science, CN
Wenping Zhang, Cici Chen, David Zhang, Chris Shang, Infineon Technologies (China) Co., Ltd., CN
Stefano de Filippis, Infineon Technologies Austria AG, AT
Jonathan Schmitt, Infineon Technologies AG, DE
PP046. A Power Converter Hardware-in-the-Loop System for Energy-Domain AI Evaluation
Fan Zhang, Shenzhen Power Bell Technology Co., Ltd., CN
Pingyang Sun, Georgios Konstantinou, School of Electrical Engineering and Telecommunications, UNSW Sydney, AU
PP047. TD3-Based Current Control for Grid-Tied Inverters: Markov-State Design and Per-Unit Normalization
Licong Wu, Ruitie Li, Binbin Li, Wei Cao, Chao Qi, Dianguo Xu, School of Electrical Engineering, Harbin Institute of Technology, CN
Yu Chen, College of Electrical Engineering and Automation, Shandong University of Science and Technology, CN
Wenqi Zhou, Bosch (China) Investment Ltd., CN
David Schadow, Jochen Kurfiss, Karl Oberdieck, Robert Bosch GmbH, DE
PP049. Coordinated network protection in DC grid
Xin Li, Shek Mong Wong, Tin Ho LI, Hong Kong Applied Science and Technology Research Institute, CN
Yanzeng WEN, ASTRI Science and Technology Research (Shenzhen) Company Limited, CN
PP050. A Solid-State Contactor for DC Electrical Power Systems
Yury Skorokhod, Dmitry Sorokin, Transconverter, RF
Sergey Volskiy, Moscow Aviation Institute (National Research University), RF
Afternoon Oral Session | Wednesday, 26 August 2026
WBG Power Semiconductor Device
1. Time-variant and Hysteresis Effects in the Thermal Characterization of Wide Band Gap Components
Gabor Farkas, Sandor Ress, Zoltan Sarkany, Wang Gang, Siemens Digital Industry Software, HU
Sandor Ress, Department of Electron Devices, Budapest University of Technology and Economics, HU
Song Chen, Fuji Electric (China) Co., Ltd., CN
Taku Takaku, Aiko Takasaki, Junya Kawabata, Yoshiaki Toyoda, Keiji Okumura, Fuji Electric Co., Ltd., JP
3. Overload Investigation of 3.3kV SiC-MOSFET Power Module for Medium-Power Applications
Bochen Liu, Muhammad Nawaz, Lu Wang, Tim Augustin, Hitachi Energy, SE
4. New 6.5 kV IGBT Press-Pack Module and FRD for Multi-GW VSC- HVDC Applications
Evgeny Tsyplakov, Alexey Sapozhnik, Athanasios Mesemanolis, Umamaheswara Vemulapati, Boni Boksteen, Arthur Su, Milad Maleki, Makan Chen, Hitachi Energy, CH
5. TLVR-Enhanced Interleaved Class-D Power Amplifier for High-Bandwidth Motor Emulation
Wei Cao, Ruitie Li, Binbin Li, Licong Wu, Yingzong Jiao, Dianguo Xu, School of Electrical Engineering, Harbin Institute of Technology, Harbin, CN
Zhengfeng Li, Nobuya Nishida, Mitsubishi Electric Corporation, JP
Takamasa Oda, MELCO Semiconductor Engineering Corporation, JP
Bo Hu, Jian Sun, Mitsubishi Electric & Electronics (Shanghai) Co., Ltd, CN
7. University Scientist Award Finalist
A Three-Module Parallel Megahertz Inverter System with Wide Power Regulation Range
Xinyi Yan, Yueshi Guan, Yijie Wang, Dianguo Xu, Harbin Institute of Technology, CN
8. A Wide Bandgap (WBG) Based Bidirectional LLC Converter for Energy Storage Systems (ESSs)
Wenping Zhang, David Zhang, Fred Hao, Chris Shang, Hobart Hua, Albert Chen, Infineon, CN
Stefano de Filippis, Gerald Deboy, Infineon Technologies Austria AG, AT
Jonathan Schmitt, Stahl Juergen, Christian Burrer, Infineon Technologies AG, DE
Morning Keynote | Thursday 27 August 2026
Semiconductor contribution to performance & efficiency of Automotive Traction Inverters
Mark Nils Muenzer, Tomas Reiter, Mathias Geike, Stephan Cordes, Matthias Weinmann, Frank Wolter, Infineon Technologies AG, DE
Chairperson: Gourab Majumdar, Mitsubishi Electric Corporation, JP
Morning Special Session | Thursday 27 August 2026
AI in Power Electronics
1. From Local Optimization to General Design Platform — An Intelligent Practices and Demo for Power Electronic Converters and Component Design
Jianing Wang, Hefei University of Technology
2. AI for Power Electronics Design: From Smart Algorithms to Intelligent Systems
Yu Chen, Huazhong University of Science and Technology
3. AI-Enabled Optimization of Modulation Techniques in Power Electronics
Weihao Hu, University of Electronic Science and Technology of China
4. Understanding, Not Just Search — Engineer-Experience-Driven Vertical Agents for Semiconductors
Ying Wu, Hangzhou Junction Magic Technology Co., Ltd.
Advanced Power Semiconductor Devices Technology
1. Next-Generation 2300 V IGBT Chipset for Renewable Energy Applications
Nick Schneider, Roger Stark, Tommaso Stecconi, Nicolo Oliva, Paula Reigosa, Lars Knoll, SwissSEM Technologies AG, CH
Norbert Plüschke, SunKing Pacific Semiconductors Hong Kong, HKSAR, CN
Owen Song, Infineon Semiconductors Company Ltd., CN
Li Juin Yip, Alexander Breymesser, Tien Quang Tran, Cesar Braz, Joachim Schoenle, Tomasz Naeve, Gregor Toschkoff, Ralf Siemieniec, Infineon Technologies Austria AG, AT
3. Best Paper Award Finalist
Low-Voltage p-GaN Gate HEMTs on 200-mm GaN-on-Si Platform with Record-Low RON, SP and RON×QG for Advanced AI Power Delivery
Yuhao Wang, Yu Shi, Yan Cheng, David Zhou, Xinying Huang, Yu Zhang, Changan Li, Zidong Cai, Haolin Hu, Wei Zeng, Xiaoping Wang, Yuxi Wan, Shenzhen Pinghu Laboratory, CN
Yan Cheng, Zongjie Zhou, Yat Hon Ng, Kevin J. Chen, The Hong Kong University of Science and Technology, HKSAR, CN
4. Temperature Dependent Characterization of the Dynamic RDS, on of Medium Voltage GaN Power HEMTs
Maximilian Goller, Madhu Lakshman Mysore, Gengqi Li, Mohamed Alaluss, Josef Lutz, Thomas Basler, Chemnitz University of Technology, DE
Afternoon Poster Dialogue Session | Thursday 27 August 2026
6. A High-Power Step-Up DC Transformer for Renewable Energy Distribution Systems
Jiahui He, Ning Wang, Binbin Li, Yingzong Jiao, Dianguo Xu, The School of Electrical Engineering and Automation, Harbin Institute of Technology, China
7. Design and Testing of 1.44 kVac / 270 Vdc 50 kW Solid-state Transformer Cell for Data Centers
Xin Wu, Haihong Long, Haoxiang Wang, Yi Zhou, Wenxin Wang, Dehong Xu, College of Electrical Engineering, Zhejiang University, Zhejiang University, China
8. Advanced Energy Management to Effectively Utilize Buildings’ Renewable Energy Generation and Storage Capabilities
Christos Mademlis, Evangelos Tsioumas, Nikolaos Jabbour, Despoina Antoniadou, Vasileios Vlastos, School of Electrical and Computer Engineering, Aristotle University of Thessaloniki, Greece
9. Adaptive Switching Frequency Boundary in Hybrid DCM and BCM Method for Flyback Micro-Inverter
Lwena Delgado, Anqi Wang, Chen Xu, Yichen Xu, Shanghai University, China
Poster Dialogue Session | Wednesday, 24 September 2025
Power Si-Devices
10. Superjunction MOSFET with a Trench Contact and Embedded SiO2 Insulator for Excellent Reverse Recoveryn
Rui Li, Keqiang Ma, Fanxin Meng, Xingli Jiang, Min Hu, Chengdu Semi-Future Technology Co., Ltd., China
11. New developed 3.3kV/2.4kA Trench IGBT for Traction application
Xing Chen, Liheng Zhu, Bin Wang, Rongzhen Qin, Qiang Xiao, State key Laboratory of Advanced Power Semiconductor Devices, China
Xing Chen, Liheng Zhu, Bin Wang, Rongzhen Qin, Qiang Xiao, Zhuzhou CRRC Times Semiconductor Co. Ltd., China
12. Plasma Shaping in Silicon Diodes by Cathode-Side Lifetime Recovery
Nick Schneider, Paula Reigosa Díaz, Tommaso Stecconi, Roger Stark, Lars Knoll, SwissSEM Technologies AG, Switzerland
Coris Li, Leon Liang, Sun.King Pacific Semiconductor Technology, China
13. Benefits of EDT3 750V Technology in Automotive Inverter Applications
Jiong Wu, Alexandra Bausch, Nebojsha Levkovski, Mathias Geike, Cedric Ouvrard, Infineon Technologies AG, Germany
14. The Impact of Gate Driver Loop Output Capability and Stray Parameters on Switching Performance
Jie Dong, Infineon Technologies, China
15. Optimized Water Jacket Pin-Fin design for Reducing Pressure Drop in Cooling System
Juyoung Kim, Monnseok Hong, onsemi, Korea
Leon Zhang, onsemi, USA
16. 1200V and 650V Automotive Power Module Applications in Various EV OBC and DC/DC Converters
Kangyoon Lee, Younhee Lee, BumSeung Jin, Noah Hur, onsemi, USA
Duwon Lee, Kangyoon Lee, Jinwoo Park, Yeriel Bai, Jeongmin Lee, onsemi, Korea
17. New intelligent power module, CIPOSTM Mini DCB IPM with 7th generation IGBTs for motor drive applications
Bokkeun Song, Jonguk Lee, Kihyun Lee, Taejin Lee, David Jo, Infineon Technologies Korea, South Korea
WBG Devices
18. Investigation on Channel Mobility of SiC Trench MOSFET
Qijun Liu, Yao Yao, Qiming He, Yehui Luo, Guan Song, Yafei Wang, Chengzhan Li, Qiang Xiao, Haihui Luo, Zhuzhou CRRC Times Semiconductor Co., LTD, China
Qijun Liu, Yao Yao, Qiming He, Yehui Luo, Guan Song, Yafei Wang, Chengzhan Li, Qiang Xiao, Haihui Luo, State Key Laboratory of Power Semiconductor and Integration Technology, China
19. A Robust and Reproducible Gate Charge Measurement Approach for SiC MOSFET Characterization
Wenqi Zhou, Tobias Pfletschinger, Lixi Yan, Hadiuzzaman Syed, Anderas Hammele, Karl Oberdieck, Robert Bosch GmbH, Germany
20. Application of SiC Hybrid Discrete in Photovoltaic and Energy Storage Systems
Shuai Cao, Rui Rong, MACMIC SCIENCE&TECHNOLOGY CO., LTD., China
21. Switching behavior investigation of 1200V CoolSiCTM MOSFET G2 discrete
Jia Zhao, Infineon Integrated Circuit (Beijing) Co., Ltd., China
Miaomiao Xiao, Song Shen, Infineon Semiconductors (Shenzhen) Co. Ltd., China
22. Leveraging Ultra-High Efficiency in High Power Open Frame Flyback Applications
Han Cui, Power Integrations Ltd, China
Andrew Smith, Jason Yan, Silvestro Fimiani, Power Integrations Ltd., USA
23. Low-cost SOI-based level-shift gate driver for high-voltage and >1MHz switching in GaN applications
Weidong Chu, Infineon Technologies Americas Corp., USA
24. Comparative Analysis of Gate Driver Control Topologies: Effects on SiC MOSFET Switching Performance in Half-Bridge Configurations
Lan Fang, Venu Gopal Mangal, Robert Bosch GmbH, Germany
Xin Jin, Fangbo Yin, Robert Bosch GmbH, China
25. New 1200 V SiC MOSFET-based CIPOS™ Maxi Intelligent Power Module for High-Efficiency Motor Drives
Kihyun Lee, Jinhyeok Kim, Soohyuk Han, Mi-ran Baek, Bokkeun Song, Infineon Technologies Korea, South Korea
Packaging & Reliability
26. Application of Cu Sintering Technology in High-Power-Density Double-Sided Cooling SiC Module
Haobin Chen, Haidong Yan, Kuang Sheng, School of Electrical Engineering, Zhejiang University
27. Investigation of Large Area Solder with TrueHeight™ Preform on Bare Cu Substrates
Liuchang Hu, Damon Hong, Alicia Zhang, Marvin Wang, Macdermid Alpha Electronics Solutions, China
Maurizio Fenech, Macdermid Alpha Electronics Solutions, Germany
28. Design and Assessment of Si/SiC Hybrid Power Module With Cu Clip Interconnection for Solar Inverter
Xiankun Zhang, Xiaofei Pan, Xiaodong Zhang, Yuancheng Liu, China Resources Runan Chongqing Co., Ltd., China
Yuxi Liang, Ming Luo, Chongqing University, China
29. Influence of the Junction Temperature on the Dynamic Gate Bias Test of SiC MOSFETs
Xiaogang Hu, Qingyuan, Hua, Nanjing NARI Semiconductor Co., Ltd., China
Nan Jiang, Wuxi PowerSemiLab Co., Ltd., China
30. Spatial-Temporal Customizable Topology Graph Networks Combined with LSTM for Power Device RUL Prediction
Xu Gao, Qiang Jia, Fenglei Cao, Yishu Wang, Fu Guo, Beijing University of Technology, China
31. Fault Classification Method for PEMFC Based on Equivalent Circuit and SVM
Jiahui Zhang, Chenxi Huang, Ruiqin Xia, Hefei University of Technology, China
Power Converter
32. Highly Efficient Auxiliary Power Supply Solution using Infineon ZVS Flyback Controller
Zhidan Luo, Mingping Mao, Eric Kok, Infineon Technologies Asia Pacific Pte Ltd, Singapore
33. An Optimized Driver Design Strategy for Energy Storage System Applications
Qibin Wu, Ziqing Zheng, Jie Dong, Infineon Technologies Center of Competence (Shanghai) Co. Ltd., China
34. Realize High Performance 200kVA Auxiliary Power Supply with 1.7kV SiC MOSFET
Jian Sun, Bo Hu, Gaosheng Song, Mitsubishi Electric & Electronics (Shanghai) Co., Ltd., China
Zhengfeng Li, Power Device Works, Mitsubishi Electric Corp., Japan
35. An active method to solve the touch current issue of totem-pole bridgeless PFC rectifier
Desheng Guo, Xingqi Chen, Texas Instruments, China
Sean Yu, Texas Instruments, USA
36. High voltage converter input units with improved input current quality
Yury Skorokhod, Dmitriy Sorokin, Transconverter, Russia Federation
Sergey Volskiy, Moscow Aviation Institute (National Research University), Russian Federation
37. 48-12 V High Frequency LLC resonant Converter with FPCB Transformer for Data Center
Siyao Hu, Naoki Agatsuma, Interdisciplinary Graduate School of Engineering Sciences, Kyushu University, Japan Yuta Totoki, Faculty of Engineering, Kyushu University, Japan
Wataru Saito, Shinichi Nishizawa, Research Institute for Applied Mechanics, Kyushu University, Japan
38. A Dual-phase Interleaved AC Link Converter for HPC Processors
Zhaoliang Wen, Dianguo Xu, Harbin Institute of Technology, China
Afternoon Oral Sessions | Wednesday, 24 September 2025
Si Devices
39. A new IGCT Platform for up to 8.5 kV with unprecedented turn-off current capability
Umamaheswara Vemulapati, Tobias Wikström, Urban Meier, Mark Frecker, Thomas Stiasny, Christian Winter, Hitachi Energy Ltd. Semiconductors, Switzerland
Zuzana Ptakova, Hitachi Energy s.r.o., Semiconductors, Czech Republic
40. Enhanced 900 A 1700 V ED Module with Micropattern Trench IGBT for High Performance and Reliability
Nick Schneider, Rémi Guillemin, SwissSEM Technologies AG, Switzerland
41. Next Generation 1200V IGBT and Diode Technology for Automotive Drivetrain Applications
Jiong Wu, Alexander Beckmann, Matteo Dainese, Matthias Fiebig, René Spenke, Infineon Technologies AG, Germany
42. Asymmetric ESD protection in bidirectional trench power MOSFETs for Li-ion battery applications
Xueqing Liu, Xiaobin Wang, Ji Pan, Sik Lui, Madhur Bobde, Alpha and Omega Semiconductor, the United States
Packaging & Reliability I
43. Effect of Processing Condition on Reliability Performance of SiC package by Pressure-less Silver Sintering
Ziying Li, Qingyuan Tang, Bo Luo, Xiangsheng Ma, Guangdong Fenghua Semiconductor Technology Co., Ltd., China
44. Full SiC SLIMDIP for High Efficiency Applications
Takakura Kazuki, Yuki Terado, Yuya Omagari, Toma Takao, Akiko Goto, Koichiro Nguchi, Mitsubishi Electric Corporation, Japan
Kai Jiang, Xiaoliang Wang, Mitsubishi Electric & Electronics (Shanghai) Co., Ltd., China
45. High Performance Materials Developing for Power Module
Shihuan Lu, Sumitomo Bakelite (Suzhou) Co., Ltd., China
Yuta Ikari, Go Ichizawa, Sumitomo Bakelite Singapore Pte., Ltd., Sigapore
46. All in One Copper Sintering – Die attach and Substrate Attach in Single Step with Soft Tool
Sri Krishna Bhogaraju, Rohan Ghosh, CuNex GmbH, Germany
Stephen Shu, Schlenk Metallic Pigments (Shanghai) Co., Ltd., China
Simon Merkert, PINK GmbH Thermosysteme, Germany
Morning Oral Session | Thursday, 25 September 2025
Keynote
47. Ultra-Compact and Efficient Power Supply Enabling AI Computing
Teng Long, University of Cambridge, China
WBG II_GaN
48. System benefit of drone driven by GaN based inverter
Alan Wai Keung Lun, Infineon Technologies Hong Kong Limited, HKSAR, China
Marco Cannone, Infineon Technologies Austria AG, Austria
Shawn Wu, Infineon Semiconductors (Shenzhen) Company Limited, China
49. Dynamic On-Resistance Characterization of GaN HEMTs under High Temperature Using Multigroup Double Pulse Test
Xu Jiang, Xinke Wu, Jiahui Sun, College of Electrical Engineering, Zhejiang University, China
Xu Jiang, Xinke Wu, ZJU-Hangzhou Global Scientific and Technological Innovation Center, China
Yuwei Wu, Kevin J. Chen, Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong, China
50. 1700V GaN Switch with Adaptive Zero-Voltage Switching for Multi-Output Flyback Converters
Han Cui, Yi Li, Power Integrations, UK
51. 25kW/L 99.2% Efficiency Wide Output Three-phase PFC based on Modular Inductive Switching Network
Wending Zhao, Xinke Wu, Zhejiang University, China
Wending Zhao, Xinke Wu, ZJU-Hangzhou Global Scientific and Technological Innovation Center, China
Motor Drive & Motion Control
52. Deadbeat predictive Control of Dual Three-Phase Linear Motors Based on Sliding Mode Observer
Huifei Cheng, Zongbo Hu, Jinsong Kang, College of Transportation, Tongji University, China
53. Dual Position Feedback-Based Oscillation Suppression Method for Full Closed-Loop Position Control
Xiangrui Xu, Xinyuan Liu, Dianguo Xu, Harbin Institute of Technology, China
54. A Flexible Operated Li-ion Battery Management System for Motor Drives in Electric Vehicle Applications
Christos Mademlis, Nikolaos Jabbour, Evangelos Tsioumas, School of Electrical and Computer Engineering, Aristotle University of Thessaloniki, Greece
55. Artificial Intelligence Augmented P(AI)ID Cycle-by-Cycle Controller for Automotive DC-DC Converter Applications Based on AURIX TC4x
Mihail Jefremow, Aziz Banna, Juergen Schaefer, Arndt Voigtlaender, Infineon Technologies, Germany
Alberto Trentin, Infineon Technologies, Italy
Poster Dialogue Session | Thursday, 25 September 2025
Motor Control
56. Double-Ratio Based PI Parameters Design Method of Two-Mass Speed loop System
Pengcheng Lan, Ming Yang, School of Electrical Engineering and Automation, Harbin Institute of Technology, China
Xinmei Zhang, Ningbo Anson CNC Technology Co., Ltd, China
Zhenhua Lv, Beijing Institute of Control Engineering, China
57. Ellipse Condition Based Controller Parameter Tuning for Refined Stability Performance
Pengcheng Lan, Ming Yang, School of Electrical Engineering and Automation, Harbin Institute of Technology, China
Xinmei Zhang, Ningbo Anson CNC Technology Co., Ltd, China
Zhenhua Lv, Beijing Institute of Control Engineering, China
58. Research on narrow pulse suppression strategy of three-level inverter based on dual modulation wave CBPWM
Xudong Bai, Guodong Yu, Harbin Institute of Technology, China
59. A Comprehensive Review of the Longitudinal End Effects in Linear Motors
Bining Liu, Jingsong Kang, College of Transportation, Tongji University, China
60. Parameter Identification of Robotic Joint with Harmonic Drive
Xinyuan Liu, Xiangrui Xu, Dianguo Xu, Harbin Institute of Technology, China
61. PDC-Based Hybrid Flux Observer with Flux Error Estimation for Sensorless SPMSM Drives
Xubo Gong, Wei Wang, Harbin Institute of Technology, China
62. Resonance Ratio Control for Vibration and Disturbance Suppression in Force Servoing
Zhiyu Zhang, Ming Yang, Pengcheng Lan, Harbin Institute of Technology, China
Xinmei Zhang, Ningbo Anson CNC Technology Co., Ltd, China
Zhenhua Lv, Beijing Institute of Control Engineering, China
63. Optimization method of stator winding temperature model of permanent magnet synchronous motor
Songze Zhao, Puqi Ning, Tao Fan, Xiaoshuang Hui, University of Chinese, Institute of Electrical Engineering, Chinese Academy of Sciences, Key Laboratory of Power Electronics and Electric Drive, Institute of Electrical Engineering, Chinese Academy of Sciences, Collaborative Innovation Center of Electric Vehicles in Beijing, China
High Frequency Power Converter
64. Reducing the Size and Weight of Filter Inductor for NPC 3-Level Inverter with 240CPWM
Jiaxuan Yu, Jiaao Xu, Deliang Wu, Shanghai University, China
65. Comparative Analysis on Series Resonant Converter and CLLC Resonant Converter for Micro-Inverter Application
Chaojie Zhu, Deliang Wu, Shanghai University, China
66. Small Signal Models of Wireless Power Transfer Converters for Unmanned Vehicles Charging Stations
Nikolay Kalugin, Aleksei Chernyshov, Egor Zhuchenko, Energet LLC, Russia
Aleksei Chernyshov, Skolkovo Institute of Science and Technology, Russia
67. Isolated Bi-directional Grid-connected Micro-inverter Based on Series Resonant Converter
Deliang Wu, Motuma Adula Dabis, Chaojie Zhu, Shanghai University, China
68. Multi-functional chip contributes to the compact design of automotive SiC power module
Lizhong Zhao, Hongguang Huang, Mitsubishi Electric &Electronics (Shanghai) Co., Ltd., China
Kentaro Yoshida, Power Device Works, Mitsubishi Electric Co., Ltd., Japan
69. Optimized Extended Phase Shift Modulation for Dual Active Bridge Converters in Automotive Battery Systems
Jiaming Wang, Yanmin Wang, Weiqi Zhang, Harbin Institute of Technology, China
70. Multi-Objective Optimization Design of Bidirectional Series Resonant Converter Based on Deep Reinforcement Learning
Xiang Pan, Zhicheng Gao, Jianing Wang, Hefei University of Technology, China
Tianyi Ren, Zhiyuan Wang, Sungrow Power Supply Company, China
71. Fast Charging Station for Simultaneous Recharging of Three Electric Vehicles
Nikolay Volskiy, Michail Krapivnoi, Charge Evolution ltd, Russian Federation
Smart Grid & Energy Transmission
72. New Generation Ultra High Power Semiconductors for VSC-HVDC Applications
Evgeny Tsyplakov, David Guillon, L. Santolaria, H. Beyer, A. Roesch, Christian Winter, Makan Chen, Hitachi Energy Ltd.Semiconductors, Switzerland
Jan Vobecky, Hitachi Energy s.r.o. Semiconductors, Czech Republic
73. Performance Analysis of Basic and Active Neutral Point Clamped Inverter for Energy Storage System
Andrew Yang, onsemi, Republic of Korea
Lei Yang, Yi Liu, onsemi, China
74. High Efficiency SiC MOSFET Solutions for Solar System
Wenmin Hua, Lifeng Chen, Infineon Technologies Center of Competence (Shanghai) Co. Ltd., China
75. Probability Predication of Electric Vehicle Schedulable Capacity Based on Improved Informer with Copula
Zhibo Liu, Meiqin Mao, Yan Du, Research Center for Photovoltaic System Engineering, Ministry of Education, Hefei University of Technology, China
Cheng Yang, State Grid Anhui Electric Power Co., Ltd, China
Yuanyue Wang, Minglei Zhu, State Grid Anhui Electric Vehicle Service Co., Ltd, China Nikos Hatziargyriou, National Technical University of Athens, Athens, Greece
76. A Comparative Evaluation of Efficiency and Volume for Monolithic Rectifier and Solid-State Transformer
Ruiye Li, Ning Wang, BinBin Li, Dianguo Xu, School of Electrical Engineering, Harbin Institute of Technology, China
77. The Economical Solution of Offshore HVDC for Wind Power Integration and Performance Comparison
Zuoyu Wei, Infineon Technologies (Xi’an) Co., Ltd., China
Heng Wang, Infineon Integrated Circuit (Beijing) Co., Ltd., China
Yuwei Lu, Infineon Technologies Center of Competence (Shanghai) Co. Ltd., China
Afternoon Oral Sessions | Thursday, 25 September 2025
SiC related hybrid switch
78. Introducing a new 650 V SOI Gate Driver with Improved DESAT Protection
Zhou Chen, Mercedes Labella, Gianluca Mele, Infineon Technologies Americas Corp., the United States
79. FusionPlus – Novel Hybridswitch to improve efficiency and reduce system cost in 800V battery electrical vehicles inverter
Norbert Pluschke, CN-iCuTech Semiconductor Co. Ltd., HKSAR, China
Carl Yang, YiTong Semiconductor, China
80. Practically achievable WLTC loss improvements for the Si/SiC hybrid switch approach in a 400 V automotive traction inverter application – a retrofitting case study
Hariprasad Baburajan, Alexander Bucher, Christian Hasenohr, Alexander Rambetius, Mohadeseh Jahani, Sabarinadh Pamarathi, Valeo eAutomotive Germany GmbH, Germany
81. Active DC-Link capacitor discharge methods with Si/SiC Fusion power module for addressing vehicle cost down
Tomas Reiter, Julius Schapdick, Michael Krug, Matthias Weinmann, Infineon Technologies AG, Neubiberg, Germany
Michael Niendor, Infineon Technologies AG, Warstein, Germany
Packaging & Reliability II
82. Analysis and Study on the Advantages of one Innovative SiC Chip Embedding PCB Solution for xEV Main Inverter Application
Hao Zhang, Wen Xu, Xiaobo Jing, Infineon Technologies China Co., Ltd. Shanghai, China
Ippisch Matthias, Fontana Nico, Infineon Technologies AG, Germany
83. 3D Wiring Technology Development for Power Modules to Achieve High-Power Density
Akito Nakagome, Tsubasa Watakabe, Souta Yamaguchi, Yuichiro Hinata, Hiromichi Gohara, Shinichiro Adachi, Yoshinari Ikeda, Hirohisa Ooyama, Fuji Electric Co., Ltd., Japan
84. Advanced cooling of power electronics with copper cold sprayed aluminum heatsinks & busbars
Michael Dasch, Reeti Singh, Ján Kondás, Max Meinicke, Leonhard Holzgaßner, Markus Brotsack, Impact Innovations, Germany
85. Increased power density and lifetime of thin automotive inverter chips through Cu bonding
Jiong Wu, Maria Spies, Matthias Fiebig, Tomas Reiter, Mark Muenzer, Infineon Technologies AG, Neubiberg, Germany
Michael Niendorf, Matthias Fiebig, Matthias Lassmann, Dennis Bräker, Marc Tuellmann, Nikolaj Gorte, Infineon Technologies AG, Warstein, Germany
Mohamed Salleh, Mohamed Saheed, Infineon Technologies Sdn. Bhd., Kulim, Malaysia
Morning Oral Session | Friday, 26 September 2025
Keynote
86. Evolutionary Trends in Power Supply for AI Data Centers
Zhengdong Jiang, Huawei Digital Power, China
Special Session
87. Power Chiplet Technology for Next Generation Power Electronics Systems
Ichiro Omura, Kyushu Institute of Technology, Japan
88. Advanced Packages With Power-On-Substrate Solutions
Frye Fung, ACCESS Semiconductor Co., Ltd., China
89. Chip Embedded Panel level Power Package for AI and Vehicles
Yoshiaki Aizawa, AOI ELECTRONICS CO.,LTD., Japan
90. Novel Integration Concepts for Power Electronics – Embedding of SiC MOSFET for High-performance Power Modules
Lars Boettcher, Fraunhofer IZM Berlin, Germany
Advanced low power Module Design
91. Inductor-Induced Oscillations in SiC Device Characterization: A Comparative Study
Nguyen-Nghia Do, Jung-Pei Cheng, Yu-Ming Chen, Chen-Min Chen, Sheng-Tsai Wu, Tai-Jyun Yu, Cheng-Han Tsai, Jing-Yao Chang, Jung-Hsuan Chen, Wei-Zhong Huang, PowerX Semiconductor, Taiwan, China
92. New Transfer-Molded Compact DIPIPMTM
Takamasa Miyazaki, Naoki Ikeda, Shuhei Yokoyama, Hiroyuki Nakamura, Masataka Shiramizu, Mitsubishi Electric Corporation, Japan
Hongguang Huang, Mitsubishi Electric & Electronics (Shanghai) Co., Ltd., China
93. Thermal Performance Analysis and Study on one Top Side Cooling discrete package for xEV OBC Application
Jiming Li, Shaoyang Li, Hao Zhang, Xiaobo Jing, Infineon Technologies China Co., Ltd. Shanghai, China
94. SiC MOSFET based CCM Totem-pole PFC with Ultra-slim Design
Guoxing Zhang, Zan Wang, Infineon Technologies, China
Pengcheng Bai, Infineon Technologies, Singapore
95. Voltage Derating Behavior of High Temperature Capacitors for DC-Link Applications
Adel Bastawros, SABIC, USA
Yuan Zhou, SABIC, China
Fumio Yu, SABIC, Japan
Takeshi Horiguchi, Takashi Mori, Kenichi Oshita, Nichicon, Japan