* Please note only the documents with authors' permission have post
Oral Session Wednesday, 28 August 2024
Keynote
1. Power semiconductors for an energy-wise society - A brief review of IEC whitepaper
Gourab Majumdar, Mitsubishi Electric Corporation, JP
Si Devices
2. PowerBrain: An automatic data extraction tool for semiconductor Datasheets
Fanghao Tian, Qingcheng Sui, Jiaze Kong, Wilmar Martinez, EnergyVille - KU Leuven, Belgium
3. Next generation 4.5 kV IGBT StakPak module and FRD for 8GW HVDC application
Jeremy Jones, David Guillon, Gaurav Gupta, Evgeny Tsyplakov, Makan Chen, Hitachi Energy, Switzerland
Jan Vobecky, Hitachi Energy Czech Republic, Czech Republic
4. New Power MOSFET Technology for High Efficient Motor Drives
Waikeung Lun, Infineon Technologies Hong Kong Limited, HKSAR, China
Ralf Siemieniec, Elvir Kahrimanovic, Infineon Technologies Austria AG, Austria
5. Scalable and Reliable IGCT Power Semiconductor Platform for Offshore Wind Turbines
Christian Winter, Thomas Stiasny, Olivier Quittard, Tobias Wikström, Makan Chen, Hitachi Energy Ltd, Switzerland
Power Conversion I
6. Adaptive Active Damping-Based Grid-side Current Harmonic Suppression Method for Totem-pole Bridgeless PFC Converter
Binxing Li, Gaolin Wang, Yujia Zhu, Guoqiang Zhang, Dianguo Xu, Harbin Institute of Technology, China
7. A Simplified-ISOP-CLLLC Converter with Wide Voltage Gain for Auxiliary Power Supply Systems of Urban Rail Vehicles
Fangyi Wei, Yan Li, Yi Tian, Ye Tian, Yanxuan Zheng, Beijing Jiaotong University, China
8. Research on Switch-Linear Hybrid Power Supply Based on Energy Feedback Scheme
Congrui Liu, Yan Li, Junyi Mao, Yi Tian, Beijing Jiaotong University, China
9. Analysis and Design of Asymmetrical Half-bridge (AHB) Flyback Converter
Guoxing Zhang, Junyang Luo, Infineon Technologies, Singapore
Pengcheng Bai, Zan Wang, Infineon Technologies, China
Poster Dialogue Session Wednesday, 28 August 2024
Power Mosfet and IGBT
10. Performance Evaluation of IGBT4 and IGBT7 in Servo Drive Design
Jia Zhao, Infineon Integrated Circuit (Beijing) Co., Ltd., China
Jianzhong Su, Beijing Jingchuan Electronic Technology Development Co., Ltd., China
Zuange Liu, Wuhan Maxsine Electric Technology Co., Ltd., China
11. New 15 V silicon trench MOSFET technology optimized for high frequency switching buck converters at low input voltages
Jasmine Huang, Infineon Semiconductors Company Ltd., China
Seung Hwan Lee, Maximilian Roesch, Thomas Gebhard, Alexander Josef Glantschnig, Infineon Technologies Austria AG, Austria
12. Optimizing Turn-off Controllability of Micropattern Trench IGBTs for 900 A ED Type Modules
Nick Schneider, Paula Diaz Reigosa, Roger Stark, Raffael Schnell, Sven Matthias, Lars Knoll, SwissSEM Technologies AG, Switzerland
Coris Li, Leon Liang, Sun.King Pacific Semiconductor Technology, China
13. The Carriers-Redistribution Phenomenon on Short-Circuit Oscillations of IGBTs
Rui Li, Keqiang Ma, Siliang Wang, Min Hu, Chengdu Semi-Future Technology Co., Ltd., China
14. Evaluation and Efficiency Study of High Current Class Discrete IGBTs-based Converter Systems
Sanbao Shi, Yi Zhang, Infineon Semiconductors (Shenzhen) Company Limited, China
Sekar Ajith Kumar, Infineon Technologies Austria AG, Austria
15. Novel 1300V Trench IGBT optimized for Automotive Applications with Bus Voltage above 900V
Lixiao Liang, Zhenhua Tan, Wei Hu, Di Li, Pengfei Liu, Rongzhen Qin, Qiang Xiao, Haihui Luo, State Key Laboratory of Power Semiconductor and Integration Technology, China
Lixiao Liang, Zhenhua Tan, Wei Hu, Di Li, Pengfei Liu, Rongzhen Qin, Qiang Xiao, Haihui Luo, Zhuzhou CRRC Times Semiconductor Co. Ltd, China
16. Comparison of Junction Temperature Measurement Methods for Power Module
Andrew Yang, Juyoung Kim, Robbie Park, onsemi, Korea
Yusi Liu, onsemi, USA
17. SPICE Modeling and Experimental Validation of the Active Short Circuit (ASC) Test with Silicon Carbide Power MOSFETs
Paolo Messina, Alessandra Raffa, Pier Paolo Veneziano, Benedetto Amata, Carlo Brugaletta, Marco Papaserio, Antonia Lanzafame, STMicroelectronics, Italy
18. Applying of RC-IGBT using 300mm wafer to consumer use
Toma Takao, Hisashi Oda, Masaki Ueno, Kazuki Takakura, Akki Goto, Koichiro Noguchi, Power Device Works, Mitsubishi Electric Corporation, Japan
Jian Chen, Mitsubishi Electric GEM Power Device (Hefei) Co., Ltd., China
19. Dynamic Current Balancing Optimization of Cu Clip-Bonded SiC power module Based on Layout-Dominated Parasitic Inductance
Xin Zhang, Yongmei Gan, Tongyu Zhang, Xiaodong Hou, Guolian Guan, Wenbo Fan, Laili Wang, Xi’an Jiaotong University, China
Kai Gao, State Grid Shanghai Electric Power Research Institute, China
Advanced Power Module
20. 125KW PCS solution in high power density GWQ package
Shuai Cao, Jun Zheng, Shuo Miao, Tao Zhang, Rui Rong, Guokang Chen, MACMIC SCIENCE&TECHNOLOGY CO., LTD, China
21. Compact 2kV IGBT Modules for Cascaded Static Var Generator
Bo Hu, Jian Sun, Gaosheng Song, Mitsubishi Electric & Electronics (Shanghai) Co., Ltd, China
22. New Developed 4.5KV/1.5KA IGBT Module based on TMOS IGBT and PIC FRD Technology
Bin Wang, Liheng Zhu, Jiacheng Xu, Xing Chen, Mengjie Wang, Pengfei Liu, Rongzhen Qin, Qiang Xiao, Haihui Luo, State Key Laboratory of Advanced Power Semiconductor Devices, China
Bin Wang, Liheng Zhu, Jiacheng Xu, Xing Chen, Mengjie Wang, Pengfei Liu, Rongzhen Qin, Qiang Xiao, Haihui Luo, Zhuzhou CRRC Times Semiconductor Co. Ltd, China
23. Introduction of New 650V Automotive Power Module with Latest Field Stop IGBT for an Excited Synchronous Motor Application
Jinwoo Park, Yeriel Bai, Duwon Lee, KyuHyun Lee, onsemi, Republic of Korea
BumSeung Jin, onsemi, USA
24. Introduction of Power Module for Brushed and Brushless Exciter System of Electrically Excited Synchronous Motor
Sangjun Koo, Yeriel Bai, Kangyoon Lee, onsemi, South Korea
BumSeung Jin, onsemi, USA
25. Switching Behavior of a 5 kA Press-Pack IGBT for HVDC Applications
Niklas John, Karsten Fink, Power Integrations GmbH, Germany
26. Study on Microstructure and Mechanical Properties of IGBT Module Bonding Interface after Multiple Reflowing
Xiankun Zhang, Xiaofei Pan, Xiaodong Zhang, Yuancheng Liu, Bin Chen, Aoao Ren, China Resources Runan Chongqing Co., Ltd., China
27. Research on Reliability of Heavy Copper Wire Bonding for IGBT Module
Yankai Chen, Jie Fang, Hongtao Zhao, Zhuzhou CRRC Times Semiconductor Co., Ltd., China.
Yankai Chen, Jie Fang, Hongtao Zhao, Skate Key Laboratory of Power Semiconductor and Integration Technology, China.
28. An Automatic Optimization Algorithm of SiC MOSFET Power Cycling Test Parameters Based on the Device Thermal Networks
Hao Jin, Jin Zhang, Xinyu Zou, Yao Yan, Institute of Electrical Engineering of the Chinese Academy of Sciences, China
Hao Jin, Xinyu Zou, Yao Yan, University of Chinese Academy of Sciences, China
29. Influence of Surface Morphology of Press-Pack IGBT on Temperature and Thermal Resistance
Yunzhi Qi, Tong An, Fei Qin, Institute of Electronics Packaging Technology and Reliability, School of Mathematics, Statistics and Mechanics, Beijing University of Technology, China
Yunzhi Qi, Tong An, Fei Qin, Beijing Key Laboratory of Advanced Manufacturing Technology, School of Mathematics, Statistics and Mechanics, Beijing University of Technology, China
30. The effect of the bonded interface damage on mechanical and electro-thermal characteristic of the IGBT Modules
Shengjun Zhao, Tong An, Fei Qin, Institute of Electronics Packaging Technology and Reliability, School of Mathematics, Statistics and Mechanics, Beijing University of Technology, China
Shengjun Zhao, Tong An, Fei Qin, Beijing Key Laboratory of Advanced Manufacturing Technology, Beijing University of Technology, China
Advanced Power Converter
31. Optimized Switching Behavior in a 3L-ANPC-Topology with paralleled IGBTs for Renewable Energy Applications
Hao Wang, Yi Xu, Yuejuan Bian, Power Integrations, China
Karsten Fink, Power Integrations GmbH, Germany
32. Design of a High Efficiency Single-Stage Series Resonant Micro- Inverter
Wenzhe Xu, Hao Chu, Cai Chen, Yong Kang, Huazhong University of Science and Technology, China
33. A Virtual Impedance-Based Control Bandwidth Enhancement Method for Three-Level Flying Capacitor Boost Converter
Kaidi Wang, Qiyu Li, Shaanxi University of Science and Technology, China
Hongwei Zhou, Dapeng Lu, Cheng Luo, TBEA Xi’an Electric Technology Co., Ltd, China
34. Adaptive Efficiency Optimization for the High-Step-Up Boost Converter Based on the Loss Analysis Model
Yuxiao Qin, Lei Zhao, Department of Electronic and Information Engineering, Shantou University, China
35. Analysis of Coupling Mechanism and Decoupling between Inductor and Active Filter in Hybrid EMI Filter
Han Bu, Fanghua Zhang, Chuang Zhou, Department of Electrical Engineering, Nanjing University of Aeronautics and Astronautics, China
36. The Charging Station for Fast-Charging Batteries of Two Electric Vehicles
Nikolay Volskiy, Mikhail Krapivnoi, Charge Evolution Ltd, Russian Federation
Dmitry Sukhov, Korsi Ltd, Russian Federation
37. Design and Optimization of a Resonant Converter for Wireless Power Transfer
Nikolay Kalugin, Valentin Gura, Alexey Suvorin, Andrey Kostin, EnerGET LLC, Russia
38. An Improved PSO-Based Maximum Power Point Tracking Algorithm for Distributed Photovoltaic System Under Partial Shading
Yanxuan Zheng, Yan Li, Yangpeng Guo, Ye Tian, Fangyi Wei, Yi Tian, Electrical Engineering School of Beijing Jiaotong University, China
Oral Session Wednesday, 28 August 2024 Afternoon
High Voltage WBG
39. Intelligent SiC Power Module for 2- and 3-level high voltage applications
Norbert Pluschke, Semikron Danfoss (Hong Kong) Company Limited, HKSAR, China
40. 3.3kV SBD-Embedded SiC-MOSFET module for railway applications
Daichi Yosho, Yoichi Hironaka, Shigeru Okimoto, Kenji Hatori, Mitsubishi Electric Corporation, Japan
Jian Sun, Mitsubishi Electric & Electronics (Shanghai) Co., Ltd., China
41. Accurate Characterization of the Gate Charge for SiC MOSFETs based on Double Pulse Test Scheme
Chenghui Qian, Hongyao Liu, Saijun Mao, UniSiC Technology (Shanghai) Co., Ltd., China
42. CoolSiC™ 2000 V SiC Trench MOSFET defines an enhanced benchmark for increased power density in new energy applications
Ming Zhou, Infineon Semiconductor (Shenzhen) Co. Ltd., China
Xin Hao, Infineon Technologies Center of Competence (Shanghai) Co. Ltd., China
Power Conversion II
43. Quantitative Calculation of Motor End Overvoltage and Analysis of Over Double Overvoltage Under High Frequency
Ying Yang, Pengcheng Ma, Pang Shuo, School of Electrical and Mechanical Engineering and Automation, Shanghai University, China
44. A Model Predictive Method for Specific Harmonic Reduction at Low witching Frequency in Permanent Magnet Synchronous Motor
Tianyu Yuan, Xiaoguang Zhang, Yuanhang Cao, North China University of Technology, China
45. Research of Three-Level ANPC Converter Based on Si/SiC Hybrid Switches
Dichao Jin, Hangzhi Liu, Aoying Hu, Yuming Zhou, Qicheng Guo, Anhui University of Technology, China
46. Parameter Estimation of Dual Three-Phase PMSM based on the Recursive Least Square Method
Weidong He, Lie Xu, Longbing Song, Yanjie Han, Lei Xia, Department of Electrical Engineering, Tsinghua University, China
Oral Session Thursday, 29 August 2024 Morning
Keynote
47. Solid state transformer in modern power system
Dianguo Xu, Harbin Institute of Technology, CN
WBG I
48. A 150 & 200mm engineered substrate increasing SiC power device current density up to 30%
Gonzalo Picun, Eric Guiot, Frédéric Allibert, Alexis Drouin, Walter Schwarzenbach, Soitec, France
Jürgen Leib, Tom Becker, Oleg Rusch, Fraunhofer IISB, Germany
49. Tuning the parasitic JFET resistance for low on-state 1.2kV SiC power MOSFETs
Lars Knoll, Nick Schneider, Paula Diaz Reigosa, Roger Stark, Raffael Schnell, SwissSEM Technologies AG, Switzerland
Coris Li, Leon Liang, Sun.King Pacific Semiconductor Technology, China
50. Analysis of the effect of system parasitic parameters on the switching of SIC devices
Qibin Wu, Lifeng Chen, Infineon Technologies Center of Competence (Shanghai) Co. Ltd., China
Yeon Jaeeul, Infineon Technologies Austria AG, Austria
51. Current Sharing Issues of Paralleled SiC MOSFET
Jie Dong, Wenmin Hua, Lifeng Chen, Infineon Technologies China Co., Ltd., China
E-mobility
52. Failure Diagnosis and Reconfiguration Scheme for Distributed Photovoltaic Converter Array in Solar Unmanned Aerial Vehicles
Xiongsen Zhang, Fuxin Liu, College of Automation Engineering, Nanjing University of Aeronautics and Astronautics, China
Zhengxiao Zong, Shanghai Institute of Space Power-Sources, China
Xuling Chen, College of Mechanical & Electrical Engineering, Nanjing University of Aeronautics and Astronautics, China
53. Fusion switch concept addresses the cost-performance dilemma in EV powertrains
Tomas Reiter, Waldemar Jakobi, Michael Niendorf, Matthias Ippisch, Mark Münzer, Infineon Technologies AG, Germany
54. High integration of SiC power modules using the multi-functional Si chip technology
Yukimasa Higashi, Noboru Morimoto, Rei Yoneyama, Mitsubishi Electric Corporation, Japan
Makoto Ueno, Kazuhiro Nishimura, Melco Semiconductor Engineering Corporation, Japan
55. A SiC-Based 60kW LLC Converter with Novel Transformer Design for Improving Voltage Balance and Wide Output Voltage Range
Chen Wei, Jianlong Chen, Zongzeng Hu, Fulin Zhang, Wolfspeed, China
Poster Dialogue Session Thursday, 29 August 2024
Integrated Power Module
56. Optimization of External Components for Automotive Smart Power Module to Mitigate Specified Junction-Isolated HVIC Malfunction
Jinwoo Park, Kangyoon Lee, Wonhi Oh, onsemi, Republic of Korea
BumSeung Jin, onsemi, USA
57. Estimating the junction temperature of CIPOSTM IPMs using their case temperature and thermistor’s resistance
Bokkeun Song, Kihyun Lee, Taejin Lee, David Jo, Infineon Technologies Korea, South Korea
58. Comparison of PIM modules with separate inverter and rectifier schemes in inverter applications
Tao Zhang, Guokang Chen, Rui Rong, Shuai Cao, Shuo Miao, Macmic science & technology Co., Ltd., China
59. Comprehensive Board Level Temperature Cycling Lifetime Projection of WLCSP GaN Power Devices
Shengke Zhang, Siddhesh Gajare, Duanhui Li, Efficient Power Conversion, United States
Future Control Concept
60. Enhanced Robust Model Predictive Control for Permanent Magnet Synchronous Motor Drives
Ruifang Chen, Xiaoguang Zhang, North China University of Technology, China
61. Simplified Model Predictive Current Control for PMSM Drives Based on Bayesian Inference
Xiang Yu, Xiaoguang Zhang, Guofu Zhang, North China University of Technology, China
62. Model Predictive Current Control for PMSM Drives with Low Parameter-dependent Model
Xiang Yu, Xiaoguang Zhang, Guofu Zhang, North China University of Technology, China
63. A Robust Dual-Vector Model Predictive Current Control for PMSM Drives
Lu Xu, Xiaoguang Zhang, North China University of Technology, China
64. A harmonic current suppression method for PMSM based on model predictive current control
Lu Xu, Xiaoguang Zhang, North China University of Technology, China
65. Improved Model Predictive Current Control for Three-Level NPC Inverter-Fed Long-Stator LSM Drives
Renjie Han, Hao Ding, Min Liu, College of Electronics and Information Engineering, Tongji University, China
Dongxiu Ou, College of Transportation, Tongji University, China
Jinsong Kang, Institute of Rail Transit, Tongji University, China
66. Improved MRAS-based Speed Sensorless Control of PMSM Considering Inverter Nonlinearity
Longbing Song, Lie Xu, Weidong He, Yanjie Han, Shaoyi Sun, Department of Electrical Engineering, Tsinghua University, China
67. Prediction of Electric Vehicles Schedulable Capacity Based on Graph Convolution Networks
Jixun Wu, Meiqin Mao, Research Center for Photovoltaic System Engineering, Ministry of Education, Hefei University of Technology, China
Cheng Yang, State Grid Anhui Electric Power Co., Ltd, China
Yuanyue Wang, Minglei Zhu, State Grid Anhui Electric Vehicle Service Co., Ltd, China
Nikos Hatziargyriou, National Technical University of Athens, Greece
68. Direct Model Predictive Control of a Five-Level ANPC Inverter with an Adaptive Linear Neuron-based Impedance Estimator
Arifin Nugroho, Zhixun Ma, Tongji University, China,
Mattia Rossi, Politecnico di Milano, Italy
SiC Devices
69. Experimental analysis of 2000 V discrete CoolSiCTM MOSFETs in TO-2474 high creepage packages
Sanbao Shi, Infineon Semiconductors (Shenzhen) Company Limited, China
Sekar Ajith Kumar, Infineon Technologies Austria AG, Austria
70. New 650V SiC MOSFET for System Efficiency, EMI and Reliability
Wonsuk Choi, Dongwook Kim, Sangwoo Pak, Power Master Semiconductor, ROK
71. Optimized Driving Conditions for Enhanced Switching Performance with SiC-MOSFETs
Sangjun Koo, Jinwoo Park, Kangyoon Lee, onsemi, South Korea
Jun Hur, BumSeung Jin, onsemi, United states
72. Research on Electrical Characteristics of 1200V SiC Trench MOSFET with Periodic Arrangement of 3D P-shield Structure
Guan Song, Yafei Wang, Yao Yao, Qiming He, Qijun Liu, Xin Yuan, Chengzhan Li, Qiang Xiao, Haihui Luo, Zhuzhou CRRC Times Semiconductor Co., LTD, China
Guan Song, Yafei Wang,Yao Yao, Qiming He, Qijun Liu, Xin Yuan, Chengzhan Li, Qiang Xiao, Haihui Luo, State Key Laboratory of Power Semiconductor and Integration Technology, China
73. The third generation SiC MOSFET with low on-state resistance and ultra-high reliability
Pengxiang Wang, Chengzhan Li, Yao Yao, Yafei Wang, Haihui Luo, Zhuzhou CRRC Times Semiconductor Co., LTD, China
Pengxiang Wang, Chengzhan Li, Yao Yao, Yafei Wang, Shuai Zhang, Jieqin Ding, Haihui Luo, State Key Laboratory of Power Semiconductor and Integration Technology, China
74. Power cycling lifetime model of sliver sintered SiC MOSFET power module based on physics-of-failure approach
Jie Chen, Wangjun Zhou, Zhexiong Luo, Haihui Luo, Qiang Xiao, Yadong Ren, Zhuzhou CRRC Times Semiconductor Co., Ltd., China
Jie Chen, Wangjun Zhou, Zhexiong Luo, Haihui Luo, Qiang Xiao, Yadong Ren, State Key Laboratory of Power Semiconductor and Integration Technology, China
75. Automated Optimization of Irregular Elliptical PinFin Heatsinks for SiC Power Module
Xiaoshuang Hui, Puqi Ning, Dongrun Li, Yuhui Kang, Fan Tao, Key Laboratory of High Density Electromagnetic Power and Systems（Chinese Academy of Sciences）, Institute of Electrical Engineering，Chinese Academy of Sciences, China
Xiaoshuang Hui, Puqi Ning, Dongrun Li, Yuhui Kang, Fan Tao, University of Chinese Academy of Sciences, China
76. Design and Implementation of 3.3kV Hybrid SiC Three-level AC/DC Converter
Xiaonian Wang, Lanyuan Xin, Yichun Zhang, Jiayi Wang, Hangjie Fu, CRRC Zhuzhou Institute Co., Ltd, China
77. Gen.4 Trench SiC-MOSFET for Automotive Applications
Ryunosuke Matsumoto, Osaga Tsuyoshi, Murakami Haruki, Ata Yasuo, Inokuchi Seiichiro, Power Device Works, Mitsubishi Electric Corp., Japan
78. Auto Power-SOI: Shaping the Future of Battery Monitoring Technology
Janpang Lim, Soitec, Singapore
79. The Advantage of SiC MOSFET for three-phase four legs Converter in Off-grid Applications
Zuoyu Wei, Infineon Technologies (Xi’an) Co., Ltd, China
Heng Wang, Infineon Integrated Circuit (Beijing) Co., Ltd, China
Lifeng Chen, Infineon Technologies Center of Competence (Shanghai) Co. Ltd., China
Oral Session Thursday, 29 August 2024 Afternoon
Packaging Technologies I
80. Comprehensive Study on the Characteristics of Large Area Transient liquid phase sintering (TLPS) Joint for SiC module
Di An, Guiqin Chang, Haoliang Zhang, Haihui Luo, Qiang Xiao, Zhuzhou CRRC Times Semiconductor Co., Ltd., China
Di An, Guiqin Chang, Haoliang Zhang, Haihui Luo, Qiang Xiao, State Key Laboratory of Power Semiconductor and Integration Technology, China
81. Comparison of Board-side and Back-side Thermal Management Techniques for eGAN® FETs in a Half-Bridge Configuration
Adolfo R. Herrera, Michael A. de Rooij, Efficient Power Conversion, U.S.A.
82. Reduced total cost of ownership with copper sintering
Sri Krishna Bhogaraju, CuNex GmbH, Germany
Stephen Shu, Schlenk Metallic Pigments (Shanghai) Co., Ltd, China
83. Investigation on direct liquid cooling design of power modules with flat baseplate for automotive application
Masahide Kamiya, Nobuhide Arai, Shinichiro Adachi, Kensuke Matsuzawa, Takahiro Koyama, Takanori Shintani, Fuji Electric Co., Ltd, Japan
Power Conversion III
84. High Density USB-PD ZVS Flyback Converter Based on Secondary Side Control
Yongshuang Zhu, Zan Wang, Huaping Cao, Infineon Semiconductors (Shenzhen) Company Limited, China
85. Combined Scheme of Lithium-ion Battery Equalization with Energy Support Capabilities for Electric Vehicle Applications
Christos Mademlis, Evangelos Tsioumas, Nikolaos Jabbour, School of Electrical and Computer Engineering, Aristotle University of Thessaloniki, Greece
86. 150°C Capacitors for DC-Link Applications
Adel Bastawros, SABIC, USA
Yuan Zhou, SABIC, China
Fumio Yu, SABIC, Japan
Takeshi Horiguchi, Takashi Mori, Kenichi Oshita, Nichicon, Japan
87. Power converter with a galvanic isolation and an increased efficiency
Yury Skorokhod, Dmitry Sorokin, Transconverter ltd, Russian Federation
Sergey Volskiy, Moscow Aviation Institute (Technical University), Russian Federation
Oral Session Friday, 30 August 2024 Morning
Keynote
88. Power semiconductors applications within future renewable energy and electrification industry
Rainer Kaesmaier, Hitachi Energy, Switzerland
Packaging Technologies II
89. Different Zth model influence on discrete IGBT Tvj calculation in main inverter application
Hao Zhang, Zhenbo Zhao, Infineon Technologies China Co., Ltd., China
Gerardo Pantoja, Infineon Technologies AG, Germany
90. 2.3 kV SiC MOSFET with New High-Power Package HPnC for 1500 VDC Applications
Song Chen, Fuji Electric (China) Co., Ltd, China
Junya Kawabata, Sousei Chen, Yoshihiro Kodaira, Takafumi Uchida, Taku Takaku, Yusuke Sekino, Yoshiyuki Kusunoki, Fuji Electric Co., Ltd., Japan
91. Advanced cooling of power electronics with copper cold sprayed aluminium heatsinks & busbars.
Michael Dasch, Reeti Singh, Ján Kondás, Max Meinicke, Leonhard Holzgaßner, Markus Brotsack, Impact-Innovations GmbH, Germany
92. A Research on the EconoDUAL™ 3 Wave IGBT module for CAV main inverters
Kai Zhao, Infineon Semiconductors (Shenzhen) Co. Ltd. China.
Xie Qicai, INVT Electric Vehicle Drive Technology (Shenzhen) Co., Ltd. China.
Lifeng Chen, Infineon Technologies Center of Competence (Shanghai) Co. Ltd., China
Smart Grid
93. Enhanced Efficiency Wind Energy Conversion System for Ship Propulsion Applications
Christos Mademlis, Evangelos Tsioumas, Nikolaos Jabbour, School of Electrical and Computer Engineering, Aristotle University of Thessaloniki, Greece
94. Instability Analysis of Grid-Connected Inverters During Low- voltage-ride Through Process
Cheng Luo, TBEA Xi'an Electric Technology Co., Ltd, China
Qijin Yang, Yuanda Liu, Yong Han, Chunbao Zou, Yunnan Energy Investment Co., Ltd. of Three Gorges Corporation, China
95. Adaptive Parametric Impedance Model Order Reduction Method for Grid-tied Renewable Energy Dominated Microgrid
Xun Jiang, Meiqin Mao, Bao Xie, Research Center for Photovoltaic System Engineering of Ministry of Education, Hefei University of Technology, China
Liuchen Chang, University of New Brunswick, Canada
Haijiao Wang, State Key Laboratory of Operation and Control of Renewable Energy & Storage Systems (China Electric Power Research Institute), China
96. Research on Active Power Reserve Grid Support Control Strategy of Single-stage Grid-connected inverter
Yangpeng Guo, Yan Li, Yanxuan Zheng, Yingdong Fang, Beijing Jiaotong University, China
Oral Session Friday, 30 August 2024 Afternoon
Peripheral Components and Circuitry
97. Aging Behavior at 85°C and 85% RH of High Heat Capacitors for DC-Link Applications
Yuan Zhou, SABIC, China
Adel Bastawros, SABIC, USA
Tetsuya Motohashi, Koichi Nakashima, Takamune Sugawara, Hisao Katsuta, SABIC, Japan
98. Balancing Switching Transient of Paralleled SiC-MOSFETs by Using Adaptive Gate Current Shaping
Christopher Wille, Tran Hoang Duy Nguyen, Pushkar Kulkarni, Lan Fang, Judith Mireille Nguene Njongue, Robert Bosch GmbH, Mobility Electronics, Germany
99. Switching Loss Reduction for 3.3kV-750A Full-SiC MOSFET Module by Active Gate Driver
Sideng Hu, Xu Wu, Menghao Li, Xiangning He, College of Electrical Engineering, Zhejiang University, China
Naoto Fujishima, Semiconductors Business Group Fuji Electric Co., Ltd, Japan
Yun Lei, Technology Strategy & Planning Office, Corporate R&D Headquarters, Fuji Electric Co., Ltd., Japan
100. High voltage gate driver IC technology integrated with DESAT diode
Weidong Chu, Infineon Technologies Americas Corp., USA
WBG II
101. Compensation of Inconsistencies in Junction Temperature Deviation during Power Cycling Tests
Yuteng Zhuo, Qiang Jin, Yuxin Xia, Shanghai Lingang Power Electronics Research Co., Ltd., China
Jingang Han, Shanghai Maritime University, China
102. New 400 V SiC MOSFET technology delivering highest efficiency in three-level industrial drive applications Owen Song, Infineon Semiconductors Company Ltd., China
Ralf Siemieniec, Elvir Kahrimanovic, Ertugrul Kocaaga, Jyotshna Bhandari, Alberto Pignatelli, Wei-Ju Chen, Heejae Shim, Sriram Jagannath, Infineon Technologies Austria AG, Austria
103. Validating Duty Cycle-Based Repetitive Gate and Drain Transient Overvoltage Specifications for GaN HEMTs
Shengke Zhang, Angel Espinoza, Ricardo Garcia, Han Gao, Siddhesh Gajare, Efficient Power Conversion, United States
104. Switching speed controllable GaN FET
Dajiang Zhang, Zhan Wang, Luyang Wang, GaNext ltd, China
